| Part Number | DU2810S |
| Manufacturer | MA-COM |
| Title | RF Power MOSFET Transistor |
| Description | DU2810S RF Power MOSFET Transistor 10 W, 2 - 175 MHz, 28 V Features N-Channel enhancement mode device DMOS structure Lower capacitances for... |
| Features |
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Low noise floor RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissip... |
| File Size | 626.03KB |
| Datasheet |
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DU2810 : XF r an AMP company = RF MOSFET 2 - 175 MHz Features l l l l l Power Transistor, lOW, 28V DU2810S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor Absolute Maximum Ratinas at 25°C ( Parameter 1 Drain-SourceVoltage Gate-Source Drain-Source Voltage Current 1 Symbol ) V, V OS ‘0s PO 1 T, T ST0 eJC ) 1 1 Rating 65 20 2.8 35’ 200 -65to+150 2 1 1 Units I v V 1 I A W “C “C “Cl-W 1 Power Dissipation ( JunctionTemperature StorageTemperature Thermal Resistance Typical Device \mpedance Frequency (MHz) 30 50 *,, (OHMS) 27.0 -j 11.0 24.0 - j 15.0 *,onD (OHMS) 23.0 - j 3.0 19.0 - j 5.0 6.0 j 9.0 -j 5.0 14..
DU2810S : XF r an AMP company = RF MOSFET 2 - 175 MHz Features l l l l l Power Transistor, lOW, 28V DU2810S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor Absolute Maximum Ratinas at 25°C ( Parameter 1 Drain-SourceVoltage Gate-Source Drain-Source Voltage Current 1 Symbol ) V, V OS ‘0s PO 1 T, T ST0 eJC ) 1 1 Rating 65 20 2.8 35’ 200 -65to+150 2 1 1 Units I v V 1 I A W “C “C “Cl-W 1 Power Dissipation ( JunctionTemperature StorageTemperature Thermal Resistance Typical Device \mpedance Frequency (MHz) 30 50 *,, (OHMS) 27.0 -j 11.0 24.0 - j 15.0 *,onD (OHMS) 23.0 - j 3.0 19.0 - j 5.0 6.0 j 9.0 -j 5.0 14..