| Part Number | DU28200M |
| Manufacturer | MA-COM |
| Title | RF Power MOSFET Transistor |
| Description | DU28200M RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V Features N-Channel enhancement mode device DMOS structure Lower capacitances ... |
| Features |
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Sou... |
| File Size | 593.38KB |
| Datasheet |
|
DU28200 : an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65 20 20 I v V A I 1 P, TJ T STG / 389 200 -65 to +150 1 W “C “C 1 Electrical Characteristics Parameter at 25°C Test Conditions Drain-Source Breakdown Voltage Drain-Source Leakage Current G.
DU28200M : an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65 20 20 I v V A I 1 P, TJ T STG / 389 200 -65 to +150 1 W “C “C 1 Electrical Characteristics Parameter at 25°C Test Conditions Drain-Source Breakdown Voltage Drain-Source Leakage Current G.