TIP127F

TIP127 : TIP125 VCBO VCEO VEBO IC ICM IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current 60 60 Power Dissipation upto TC=25°C Power Dissipation Derate above TC=25°C PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA RθJC TJ, TSTG Thermal Resistance from Junction to Ambient in Free Air Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range TIP126 80 80 5.0 5.0 8.0 120 65 0.52 2.0 16 62.5 1.92 -65 to +150 TIP127 100 100 Unit V V.

TIP127 : TIP125/126/127 TIP125/126/127 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP125 : TIP126 : TIP127 VCBO -60 -80 -100 V V V Collector-Emitter Voltage : TIP125 : TIP126 : TIP127 VCEO -60 -80 -100 V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temp.

TIP127 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP125/126/127 Features • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking : part number Absolute Maximum Ratings @ Ta = 25℃(unless otherwise noted) Symbol VCBO TIP125 TIP126 TIP127 VCEO TIP125 TIP126 TIP127 VEBO IC ICM IB PC TJ TSTG Parameter Collector-base voltage (Open emitter) Collector-emitter voltage (Open base) Emitter-base Voltage(.

TIP127 : ·With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP125 VCBO Collector-base voltage TIP126 TIP127 Open emitter TIP125 VCEO Collector-emitter voltage TIP126 TIP127 Open base VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature Open collector TC=25 .

TIP127 : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.5 4 1.0 0.5 0.8 200 2N5296 NPN 60 40 5 36 4 5004 50 30 120 1.0 4 1.0 1.0 0.8 200 2N5298 NPN 80 60 5 36 4 5004 50 20 80 1.5 4 1.0 1.5 0.8 200 2N6107 PNP 80 70 5 40 7 10001 60 30 150 2.3 2.0 4 7.0 4 3.

TIP127 : PNP/NPN Silicon Power Transistor P b Lead(Pb)-Free FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TIP120 Series 1 23 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP125 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC R ӨJA R ӨJC TJ Tstg Collector Power Dissipation Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Junction Temperature Storage Temperature TIP121 TIP126 80 80 5 5 2 62.5 1.92 150 -55-150 TIP122.

TIP127 : TIP120/125 Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO Collector Current Continuous IC Collector Current Peak ICM Base Current Power Dissipation upto Tc=25ºC Derate above 25ºC IB PD Power Dissipation upto Ta=25ºC Derate above 25ºC PD Unclamped Inductive Load Energy Operating And Storage Junction Temperature *E Tj, Tstg * IC=1A, L=100mH, P.R.F.=10Hz, Vcc=20V, RBE=100Ω TIP121/126 80 80 5 5 8 120 65 0.52 2 16 50 - 65 to +150 TIP122/127 100 100 UNIT V V V A A mA W W/ºC W mW/ºC mJ ºC THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 1.92 62.5 ºC/W ºC/.

TIP127 : TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor November 2014 TIP125 / TIP126 / TIP127 PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122 Equivalent Circuit C B Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP125 TIP125TU TIP126 TIP126TU TIP127 TIP127TU Top Mark TIP125 TIP125 TIP126 TIP126 TIP127 TIP127 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Bulk Rail Bulk Rail Absolute Maximum Ratings Stresses exceedi.

TIP127 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built–In Base–Emitter Shunt Resistors • TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP120, .

TIP127 : SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V(Min.) TIP127 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEB0 Collector Current DC Pules IC ICP Base Current Collector Power Dissipation (Tc=25 ) IB PC Junction Temperature Tj Storage Temperature Range Tstg RATING -120 -120 -5 -5 -8 -0.12 65 150 -55 150 UNIT V V V A A W EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL .

TIP127 : Production specification Medium Power Linear Switching Applications TIP127 FEATURES  Complementary to TIP122. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ -100 V -5 V -5 A -8 -120 mA 2 65 -65 to +150 W ℃ X022 Rev.A www.gmesemi.com 1 Production specification Medium Power Linear Switching Applications TIP127 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temper.

TIP127 : The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  EQUIVALENT TEST (R1 ≈8kΩ, R2 ≈0.12kΩ) C 1 1 TO-220 TO-220F 1 TO-252 1 TO-252D B R1 R2 E  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package TIP127L-TA3-T TIP127G-TA3-T TO-220 TIP127L-TF3-T TIP127G-TF3-T TO-220F TIP127L-TN3-T TIP127G-TN3-T TO-252 TIP127L-TND-R TIP127G-TND-R TO-252D TIP127L-T60-K TIP127G-T60-K TO-126 TIP127L-T6S-K TIP127G-T6S-K TO-126S Note: Pin assignment: E: Emitter B: Base C: Collector 1 TO-126 1 TO-126S Pin Assignment 1 2 3 B C E B C E B C E B C E E C B E C B Packing Tub.

TIP127 : TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.com DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER.

TIP127 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A ·Complement to Type TIP122 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation TIP127 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -5 ICM Collector Current-Peak -8 IB Base Current-DC Collector Power .

TIP127 : The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Product status links TIP120 TIP121 TIP122 TIP125 TIP127 DS0854 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Note: TIP120, TIP121, TIP122, TIP125, TIP127 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector current.

TIP127-A : The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 70 Ω PNP: R1 = 16 kΩ R2 = 60 Ω Table 1. Device summary Marking TIP122 TIP127 Polarity NPN TO-220 Tube PNP Package Packaging Order codes TIP122-A TIP127-A July 2009 Doc ID 15983 Rev 1 1/12 www.st.com 12 Contents www.DataSheet4U.com TIP122-A, TIP127-A Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . .

TIP127-Q : The UTC TIP127-Q is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  EQUIVALENT TEST (R1 ≈8kΩ, R2 ≈0.12kΩ) C 11 TO-220 TO-220F 1 TO-252 1 TO-252D B R1 R2 E  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package TIP127L-TA3-T TIP127G-TA3-T TO-220 TIP127L-TF3-T TIP127G-TF3-T TO-220F TIP127L-TN3-T TIP127G-TN3-T TO-252 TIP127L-TND-R TIP127G-TND-R TO-252D TIP127L-T60-K TIP127G-T60-K TO-126 TIP127L-T6S-K TIP127G-T6S-K TO-126S Note: Pin assignment: E: Emitter B: Base C: Collector 1 TO-126 1 TO-126S Pin Assignment 123 BCE BCE BCE GDS ECB ECB Packing Tube Tube Tape Reel Tape Reel Bulk Bulk .