| Part Number | BZD23-C47 |
| Manufacturer | NXP |
| Title | Voltage regulator diodes |
| Description | Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM248 Fig.1 Simplified outline ... |
| Features |
• Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 3.6 to 270 V for 46 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo-pack. LIMITING VALUES In accordance with the Abso... |
| File Size | 40.75KB |
| Datasheet |
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BZD23-C43 : Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM248 Fig.1 Simplified outline (SOD81) and symbol. MIN. − − − − MAX. 2.0 2.5 1.0 1.0 UNIT W W W W 300 300 W W 150 +200 +175 +200 +175 W °C °C °C °C −65 −65 −65 −65 1996 Jun 10 2 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF forward voltage PARAMETER CONDITIONS IF = 0.2 A; see Fig.6 BZD23 series MAX. 1.2 V UNIT Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX (1) WORKING VOLTAGE VZ (V) at IZ MIN. NOM.
BZD23-C430 : Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM248 Fig.1 Simplified outline (SOD81) and symbol. MIN. − − − − MAX. 2.0 2.5 1.0 1.0 UNIT W W W W 300 300 W W 150 +200 +175 +200 +175 W °C °C °C °C −65 −65 −65 −65 1996 Jun 10 2 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF forward voltage PARAMETER CONDITIONS IF = 0.2 A; see Fig.6 BZD23 series MAX. 1.2 V UNIT Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX (1) WORKING VOLTAGE VZ (V) at IZ MIN. NOM.
BZD23-C470 : Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM248 Fig.1 Simplified outline (SOD81) and symbol. MIN. − − − − MAX. 2.0 2.5 1.0 1.0 UNIT W W W W 300 300 W W 150 +200 +175 +200 +175 W °C °C °C °C −65 −65 −65 −65 1996 Jun 10 2 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF forward voltage PARAMETER CONDITIONS IF = 0.2 A; see Fig.6 BZD23 series MAX. 1.2 V UNIT Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX (1) WORKING VOLTAGE VZ (V) at IZ MIN. NOM.
BZD23-C4V3 : Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM248 Fig.1 Simplified outline (SOD81) and symbol. MIN. − − − − MAX. 2.0 2.5 1.0 1.0 UNIT W W W W 300 300 W W 150 +200 +175 +200 +175 W °C °C °C °C −65 −65 −65 −65 1996 Jun 10 2 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF forward voltage PARAMETER CONDITIONS IF = 0.2 A; see Fig.6 BZD23 series MAX. 1.2 V UNIT Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX (1) WORKING VOLTAGE VZ (V) at IZ MIN. NOM.
BZD23-C4V7 : Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM248 Fig.1 Simplified outline (SOD81) and symbol. MIN. − − − − MAX. 2.0 2.5 1.0 1.0 UNIT W W W W 300 300 W W 150 +200 +175 +200 +175 W °C °C °C °C −65 −65 −65 −65 1996 Jun 10 2 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF forward voltage PARAMETER CONDITIONS IF = 0.2 A; see Fig.6 BZD23 series MAX. 1.2 V UNIT Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. TYPE No. SUFFIX (1) WORKING VOLTAGE VZ (V) at IZ MIN. NOM.