Part Number | BUK7514-55 |
Manufacturer | NXP |
Title | TrenchMOS transistor Standard level FET |
Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very ... |
Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.
BUK7514-55
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power d...
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File Size | 64.69KB |
Datasheet |
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BUK7514-55 : N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK7514-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 68 142 175 14 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting value.
BUK7514-55A : Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; Tj = 25 °C ID = 50 A; Vsup ≤ 25 V; R.