| Part Number | BUT100 |
| Manufacturer | STMicroelectronics |
| Title | HIGH POWER NPN SILICON TRANSISTOR |
| Description | The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching... |
| Features |
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| File Size | 42.84KB |
| Datasheet |
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BUT100 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Hight Current Capability ·Hight Ruggedness ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor Control ·Uninterruptable Power Supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A ICM Collector Current-Peak Repetitive 150 A PC Collector Power Dissipation @ TC=75℃ 300 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -55~200 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is regi.