| Part Number | BUT56A |
| Manufacturer | Wing Shing Computer Components |
| Title | NPN EPITAXIAL SILICON TRANSISTOR |
| Description | BUT56A NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25... |
| Features |
mponents Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
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| File Size | 21.17KB |
| Datasheet |
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BUT56 : ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUT56 Collector-base voltage BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT56A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 6 8 10 4 100 150 -65~150 V A A A W Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance juncti.
BUT56A : ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUT56 Collector-base voltage BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT56A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 6 8 10 4 100 150 -65~150 V A A A W Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance juncti.
BUT56AF : ·With TO-220Fa package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 6 8 10 4 50 150 -65~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERIS.
BUT56AF : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·High Power Dissipation ·With TO-220Fa Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Tempe.