| Part Number | BUT92 |
| Manufacturer | STMicroelectronics |
| Title | FAST-SWITCHING POWER TRANSISTOR |
| Description | The BUT92 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching ... |
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| File Size | 44.16KB |
| Datasheet |
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BUT90 : The BUT90 is a Multiepitaxial Planar NPN leTransistor in TO-3 package. It is intended for use oin high frequency and efficency converters, - Obsswitching regulators and motor control. 1 2 TO-3 (version "S") INTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -1.5 V) 200 V VCEO Collector-Emitter Voltage (IB = 0) 125 V VEBO Emitter-Base Voltage (IC = 0) 10 V IC Collector Current 50 A ICM Collector Peak Current (tp = 10 ms) 120 A IB Base Current 12 A IBM Base Peak Current (tp = 10 ms) Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Max Operating Junction Temperat.
BUT90 : www.DataSheet.co.kr BUT90 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions 22.23 (0.875) max. Min. Typ. Max. 125 50 Units V A Hz @ (VCE / IC) 10 250 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@s.
BUT91 : www.DataSheet.co.kr BUT91 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions 22.23 (0.875) max. Min. Typ. Max. 200 50 Units V A Hz @ 4/5 (VCE / IC) 20 8M 120 250 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please con.
BUT92 : www.DataSheet.co.kr BUT92 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions 22.23 (0.875) max. Min. Typ. Max. 250 50 Units V A Hz @ 4/5 (VCE / IC) 20 8M 120 250 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please con.
BUT92A : www.DataSheet.co.kr BUT92A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions 22.23 (0.875) max. Min. Typ. Max. 300 50 Units V A - @ (VCE / IC) 8M 250 Hz W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@.
BUT92AS : www.DataSheet.co.kr BUT92AS Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions 22.23 (0.875) max. Min. Typ. Max. 300 50 Units V A - @ (VCE / IC) 8M 200 Hz W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales.
BUT93 : ·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 350 5 4 6 2 50 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.D.