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BUZ311

Part Number	BUZ311
Manufacturer	Siemens Semiconductor Group
Title	Power Transistor
Description	BUZ 311 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type ...
Features	ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS ...
Published	Mar 23, 2005
Datasheet	BUZ311 PDF File

Features

ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 µA VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω...

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