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1N485B


Part Number 1N485B
Manufacturer Microsemi Corporation
Title GENERAL PURPOSE SILICON DIODES
Description • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating T...
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1N485B : 1N485B & 1N486B Small Signal Diode Features: D DO−35 Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Max. Repetitive Reverse 1N485B . . . . . . . . .V.o.l.ta. g. e. .,V. R. .R.M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V 1N486B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Average Rectified Forward Current, IF(AV.

1N485B : • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1N483B 1N485B 1N486B MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA 0.085/0.125 2.16/3.18 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1/120 s TA = 25°C A 2 2 2 V (pk) 1N483B 1N485B 1N486B 80 180 250 V (pk) 70 180 225 mA 200 200 200 FIGURE 1 TYPE VF @100mA I R1 at V RWM TA = 25°C nA dc 25 25 25 I R2 at V RM TA = 25°C µA 100 100 100 .

1N485B : Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

1N485B : 1N485B 1N485B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value VRRM IF(AV) IFSM Tstg TJ Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature 200 200 1.0 4.0 -65 to +200 175 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consult.

1N485B : 1N482B-1N486B High-reliability discrete products and engineering services since 1977 LOW LEAKAGE RECTIFIERS FEATURES:  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number  Available Non-RoHS (standard) or RoHS compliant (add PBF suffix) MAXIMUM RATINGS Rating Average Forward Rectified Current @ TA = 75°C Average Forward Rectified Current @ TA = 150°C Maximum Non-Repetitive Surge (8.3ms ½ sine) Junction Temperature Range Storage Temperature range Thermal Resistance @ L = 3/8” Symbol IAV IAV IFSM TJ Tstg RϴJL Value 200 50 2.0 -65 to 175 -65 to 175 250 Unit mA mA A °C °C °C/mW ELECTRICAL CHARACTERISTICS Reverse Voltage Par.




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