| Part Number | BSM50GD120DN2E3226 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Description | BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal ba... |
| Features |
Tj Tstg RthJC RthJCD Vis
1
BSM 50 GD120DN2E3226
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.8 4 6.5 3 3.7
V
VGE = VCE, IC = 2 mA
Collector-emitter satura...
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| File Size | 132.74KB |
| Datasheet |
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