| Part Number | BSP61 |
| Manufacturer | Siemens Semiconductor Group |
| Title | PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
| Description | PNP Silicon Darlington Transistors BSP 60 BSP 62 High collector current q Low collector-emitter saturation voltage q Complementary types: BSP ... |
| Features |
Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage1) IC = 10 mA, RBE = 150 Ω BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 µA, IB = 0 BSP 60 BSP 61 BSP 62 Emitter-base breakdown voltage IE = 100 µA...
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| File Size | 153.39KB |
| Datasheet |
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BSP60 : PNP Darlington transistor in a SOT223 plastic package. NPN complements: BSP50, BSP51 and BSP52. 1 Top view 2 4 BSP60; BSP61; BSP62 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION 2, 4 1 3 MAM266 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP60 BSP61 BSP62 VCES collector-emitter voltage BSP60 BSP61 BSP62 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. emitter-base vo.
BSP60 : BSP60 ... BSP62 PNP Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP50 ... BSP52 (NPN) 4 3 2 1 VPS05163 Type BSP60 BSP61 BSP62 Maximum Ratings Parameter Marking BSP 60 BSP 61 BSP 62 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT223 SOT223 SOT223 Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg BSP60 45 60 5 BSP61 60 80 5 1 2 100 1.5 150 -65 ... 150 BSP62 80 90 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation , TS = 124 °C Junction temperature Storage temperature A mA .
BSP60 : PNP Darlington transistor in an SOT223 plastic package. NPN complement: BSP50 2. Features and benefits • High current of -1 A • Low voltage of -45 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial switching applications such as: - Print hammer - Solenoid - Relay and lamp drivers 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCBO collector-base voltage VCES collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open emitter base short-circuited to emitter VCE = -10 V; IC = -150 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - -60 V - - -45 V --[1] 1000 - .
BSP603S2L : 2SWL026£ 3RZHU7UDQVLVWRU )HDWXUH • 1&KDQQHO • (QKDQFHPHQW PRGH • /RJLF /HYHO • Green Product (RoHS Compliant) • AEC Qualified BSP603S2L 3URGXFW 6XPPDU\ 9'6 9 5'6 RQ PΩ ,' $ 627 7\SH %636/ 3DFNDJH 627 2UGHULQJ &RGH 0DUNLQJ On Request 1/ 0D[LPXP 5DWLQJV DW 7M & XQOHVV RWKHUZLVH VSHFLILHG 3DUDPHWHU 6\PERO &RQWLQXRXV GUDLQ FXUUHQW 7$ & 7$ & ,' 3XOVHG GUDLQ FXUUHQW 7$ & *DWH VRXUFH YROWDJH 3RZHU GLVVLSDWLRQ 7$ & ,' SXOV 9*6 3WRW 2SHUDWLQJ DQG VWRUDJH WHPSHUDWXUH ,(& FOLPDWLF FDWHJRU\ ',1 ,(& 7M 7VWJ 9DOXH 8QLW $ 9 : & Data Sheet 1 Rev. 1.1, 2008-05-27 BSP603S2L 7KHUPDO &KDUDFWHUL.
BSP61 : PNP Darlington transistor in a SOT223 plastic package. NPN complements: BSP50, BSP51 and BSP52. 1 Top view 2 4 BSP60; BSP61; BSP62 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION 2, 4 1 3 MAM266 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP60 BSP61 BSP62 VCES collector-emitter voltage BSP60 BSP61 BSP62 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. emitter-base vo.
BSP61 : BSP60 ... BSP62 PNP Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP50 ... BSP52 (NPN) 4 3 2 1 VPS05163 Type BSP60 BSP61 BSP62 Maximum Ratings Parameter Marking BSP 60 BSP 61 BSP 62 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT223 SOT223 SOT223 Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg BSP60 45 60 5 BSP61 60 80 5 1 2 100 1.5 150 -65 ... 150 BSP62 80 90 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation , TS = 124 °C Junction temperature Storage temperature A mA .
BSP612P : BSP612P OptiMOS™-P Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V -60 120 170 -3 • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant PG-SOT-223 • Halogen-free according to AEC61249-2-21 V mW A Type BSS612P Package SOT223 Tape and Reel Information H6327: 1000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Marking Halogen Free BSP612P Yes Packing Non dry Parameter Symbol Conditions Value Unit Continuous drain current I D T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt I D,puls.
BSP613P : SIPMOS® Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter • Qualified according to AEC Q101 • Halogenfree according to IE C 61249221 BSP613P Product Summary VDS RDS(on) ID -60 0.13 -2.9 V Ω A PG-SOT223 Gate pin1 Drain pin 2,4 Source pin 3 Type BSP613P Package PG-SOT223 Tape and reel Packaging H6327: 1000pcs/r. Non Dry Marking BSP613P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C ID TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=2.9 A , VDD=-25V, RGS=25Ω ID puls EAS Avalanche energy, periodic limi.
BSP615S2L : and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expect.
BSP62 : PNP Darlington transistor in a SOT223 plastic package. NPN complements: BSP50, BSP51 and BSP52. 1 Top view 2 4 BSP60; BSP61; BSP62 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION 2, 4 1 3 MAM266 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP60 BSP61 BSP62 VCES collector-emitter voltage BSP60 BSP61 BSP62 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. emitter-base vo.
BSP62 : PNP Silicon Darlington Transistors BSP 60 BSP 62 High collector current q Low collector-emitter saturation voltage q Complementary types: BSP 50 BSP 52 (NPN) q Type BSP 60 BSP 61 BSP 62 Marking BSP 60 BSP 61 BSP 62 Ordering Code (tape and reel) Q62702-P1166 Q62702-P1167 Q62702-P1168 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCER VCB0 VEB0 IC ICM IB .
BSP62 : BSP60 ... BSP62 PNP Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP50 ... BSP52 (NPN) 4 3 2 1 VPS05163 Type BSP60 BSP61 BSP62 Maximum Ratings Parameter Marking BSP 60 BSP 61 BSP 62 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT223 SOT223 SOT223 Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg BSP60 45 60 5 BSP61 60 80 5 1 2 100 1.5 150 -65 ... 150 BSP62 80 90 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation , TS = 124 °C Junction temperature Storage temperature A mA .
BSP62T1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSP62T1/D PNP Small-Signal Darlington Transistor This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BSP62T1 to order the 7 inch/1000 unit reel. Use BSP62T3 to order the 13 inch/4000 unit reel. • NPN Complement is BSP52T1 COLLECT.