BSS63

BSS60 : .

BSS60 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25?C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VcEO VCER VCBO VEBO ic PD pd Tj, T stg Symbol Rwjc RyjA BSS BSS BSS 60 61 62 45 60 80 45 60 80 60 80 100 5.0 1.0 0.8 5.3 5 28.6. -65 to +200 Max 35 220 Unit Vdc Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Unit °C/W °C/W BSS60 BSS61 BSS62 CASE 79, STYLE 1 TO-39 (TO-205A.

BSS606N : OptiMOS™-3 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; Halogen-free; RoHS compliant BSS606N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 60 mW 90 3.2 A PG-SOT-89 4 1 2 3 Type BSS606N Package Tape and Reel Information PG-SOT-89 H6327: 3000 pcs/ reel Marking KE Halogen-free Yes Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C 3.2 2.6 12.8 Avalanche energy, single pulse E AS I D=3.2 A, R GS=25 W 14 Package Non-dr.

BSS60A : NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A – 51A – 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage www.DataSheet.net/ Ratings BSS60A BSS61A BSS62A BSS60A BSS61A BSS62A Value 60 80 90 45 60 80 5 1 2 0.1 5 0.8 200 -65 to +150 Unit V VCES VEBO IC IB Ptot TJ TStg Collector-Emitter Voltage VBE = 0 Emitter-Base Voltage Collector Current Base Current IC ICM V V A A W °C °C @ Tcase= 25° @ Tamb= 25° Junction Temperature Storage Temperature r.

BSS61 : 2 3 2 DESCRIPTION PNP Darlington transistor in a TO-39 metal package. NPN complements: BSS51 and BSS52. 3 MAM310 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSS61 BSS62 VCES collector-emitter voltage BSS61 BSS62 IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = −500 mA; VCE = −10 V IC = −500 mA; VCE = −5 V; f = 100 MHz VBE = 0 − − − − − 2000 − − − − − − − 200 −60 −80 −1 0.8 5 − − MHz V V A W W open emitter − − − − −80 −90 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 May 14 2 Philips Semiconductors Product specification PNP Darlington tran.

BSS61 : .

BSS61 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25?C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VcEO VCER VCBO VEBO ic PD pd Tj, T stg Symbol Rwjc RyjA BSS BSS BSS 60 61 62 45 60 80 45 60 80 60 80 100 5.0 1.0 0.8 5.3 5 28.6. -65 to +200 Max 35 220 Unit Vdc Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Unit °C/W °C/W BSS60 BSS61 BSS62 CASE 79, STYLE 1 TO-39 (TO-205A.

BSS61A : NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A – 51A – 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage www.DataSheet.net/ Ratings BSS60A BSS61A BSS62A BSS60A BSS61A BSS62A Value 60 80 90 45 60 80 5 1 2 0.1 5 0.8 200 -65 to +150 Unit V VCES VEBO IC IB Ptot TJ TStg Collector-Emitter Voltage VBE = 0 Emitter-Base Voltage Collector Current Base Current IC ICM V V A A W °C °C @ Tcase= 25° @ Tamb= 25° Junction Temperature Storage Temperature r.

BSS62 : 2 3 2 DESCRIPTION PNP Darlington transistor in a TO-39 metal package. NPN complements: BSS51 and BSS52. 3 MAM310 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSS61 BSS62 VCES collector-emitter voltage BSS61 BSS62 IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = −500 mA; VCE = −10 V IC = −500 mA; VCE = −5 V; f = 100 MHz VBE = 0 − − − − − 2000 − − − − − − − 200 −60 −80 −1 0.8 5 − − MHz V V A W W open emitter − − − − −80 −90 V V CONDITIONS MIN. TYP. MAX. UNIT 1997 May 14 2 Philips Semiconductors Product specification PNP Darlington tran.

BSS62 : .

BSS62 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25?C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VcEO VCER VCBO VEBO ic PD pd Tj, T stg Symbol Rwjc RyjA BSS BSS BSS 60 61 62 45 60 80 45 60 80 60 80 100 5.0 1.0 0.8 5.3 5 28.6. -65 to +200 Max 35 220 Unit Vdc Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °C Unit °C/W °C/W BSS60 BSS61 BSS62 CASE 79, STYLE 1 TO-39 (TO-205A.

BSS62A : NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A – 51A – 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage www.DataSheet.net/ Ratings BSS60A BSS61A BSS62A BSS60A BSS61A BSS62A Value 60 80 90 45 60 80 5 1 2 0.1 5 0.8 200 -65 to +150 Unit V VCES VEBO IC IB Ptot TJ TStg Collector-Emitter Voltage VBE = 0 Emitter-Base Voltage Collector Current Base Current IC ICM V V A A W °C °C @ Tcase= 25° @ Tamb= 25° Junction Temperature Storage Temperature r.

BSS63 : BSS63 SMALL SIGNAL PNP TRANSISTOR Type BSS63 s Marking T3 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE LOW FREQUENCY APPLICATONS NPN COMPLEMENT IS BSS64 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -110 -100 -6 -0.1 -0.2 200 -65 to 150 150 Unit V V V A A mW o o C C 1/4 .

BSS63 : BCX42, BSS63 PNP Silicon AF an Swiching Transistors
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX41, BSS64 (NPN) 3 2 1 VPS05161 Type BCX42 BSS63 Maximum Ratings Parameter Marking DKs BMs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BSS63 100 110 5 BCX42 125 125 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 800 1 100 200 330 150 -65 ... 150 mA A mA mW °C.

BSS63 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage R BE = 10 kn —Collector Current Continuous Symbol VCEO VCER THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T/\ = 25°C Derate above 25°C Storage Temperature PD Tstg •Thermal Resistance Junction to Ambient RflJA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 100 Max 350 2.8 150 357 Unit mAdc Unit mW mW/°C °C °C/W BSS63 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 100 fiAdc) Collector-Emitter Break.

BSS63 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING -110 -100 -6 -100 100 200 150 -65ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ A G H D BSS63 EPITAXIAL PLANAR PNP TRANSISTOR E L BL 23 1 PP M 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SO.