BSS79B

BSS79 : SMD Type TransistIoCrs NPN Silicon Switching Transistors BSS79,BSS81 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS79 BSS81 40 35 75 6 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 .

BSS79 : NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 80, BSS 82 (PNP) q Type BSS 79 B BSS 79 C BSS 81 B BSS 81 C Marking CEs CFs CDs CGs Ordering Code (tape and reel) Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol BSS 79 VCE0 .

BSS79 : BSS79, BSS81 NPN Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 (PNP) 3 2 1 VPS05161 Type BSS79B BSS79C BSS81B BSS81C Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS79 40 75 6 800 1 100 200 330 150 BSS81 35 Unit .

BSS79B : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol v CEO v CBO VEBO "C THERMAL CHARACTERISTICS Characteristic Symbol *Total Device Dissipation, TA = 25°C Derate above 25°C PD Storage Temperature T stg •Thermal Resistance Junction to Ambient R 0JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 40 75 6.0 100 Max, 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mAdc) Collector-Base Breakdown Voltage dC = 10 jiAdc) Emitter-Base Breakdown Volt.

BSS79B : BSS79, BSS81 NPN Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 (PNP) 3 2 1 VPS05161 Type BSS79B BSS79C BSS81B BSS81C Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS79 40 75 6 800 1 100 200 330 150 BSS81 35 Unit .

BSS79B : www.DataSheet4U.com SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 – SEPTEMBER 95 PARTMARKING DETAILS 7 BSS79B - CE BSS79C - CF BSS79B BSS79C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM PTOT tj:tstg VALUE 75 40 6 800 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO MIN. 75 40 6 10 10 10 0.3 1.0 40 100 250 8 10 10 225 60 120 300 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Base Cut-Off Current Emitter .

BSS79B : SMD Type TransistIoCrs NPN Silicon Switching Transistors BSS79,BSS81 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS79 BSS81 40 35 75 6 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 .

BSS79C : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol v CEO v CBO VEBO "C THERMAL CHARACTERISTICS Characteristic Symbol *Total Device Dissipation, TA = 25°C Derate above 25°C PD Storage Temperature T stg •Thermal Resistance Junction to Ambient R 0JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 40 75 6.0 100 Max, 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mAdc) Collector-Base Breakdown Voltage dC = 10 jiAdc) Emitter-Base Breakdown Volt.

BSS79C : NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 80, BSS 82 (PNP) q Type BSS 79 B BSS 79 C BSS 81 B BSS 81 C Marking CEs CFs CDs CGs Ordering Code (tape and reel) Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol BSS 79 VCE0 .

BSS79C : BSS79, BSS81 NPN Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 (PNP) 3 2 1 VPS05161 Type BSS79B BSS79C BSS81B BSS81C Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS79 40 75 6 800 1 100 200 330 150 BSS81 35 Unit .

BSS79C : BSS79C BSS79C NPN General Purpose Amplifier • This device is for use as a medium power amplifier and swith requiring collector currents up to 500mA. • Sourced from process 19. • See BCW65C for characteristics. C E B SOT-23 Mark: CF Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 75 6.0 800 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum jun.

BSS79C : www.DataSheet4U.com SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 – SEPTEMBER 95 PARTMARKING DETAILS 7 BSS79B - CE BSS79C - CF BSS79B BSS79C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM PTOT tj:tstg VALUE 75 40 6 800 330 -55 to +150 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO MIN. 75 40 6 10 10 10 0.3 1.0 40 100 250 8 10 10 225 60 120 300 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Base Cut-Off Current Emitter .

BSS79C : SMD Type TransistIoCrs NPN Silicon Switching Transistors BSS79,BSS81 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS79 BSS81 40 35 75 6 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 .