BT152

BT150 : Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITI.

BT150 : Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.  SYMBOL SCR  ORDERING INFORMATION Order Number Lead Free Halogen Free BT150L-TA3-T BT150G-TA3-T Note: Pin Assignment: K: Cathode A: Anode G: Gate Package TO-220 Pin Assignment 1 2 3 K A G Packing Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R301-008.D BT150 SCR  ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-Sta.

BT150-500R : Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITI.

BT150-600R : Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITI.

BT150-800R : Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITI.

BT150M : Glass passivated, sensitive gate thyristors in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150S series BT150M series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150S (or BT150M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab c.

BT150M-500R : Glass passivated, sensitive gate thyristors in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150S series BT150M series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150S (or BT150M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab c.

BT150M-600R : Glass passivated, sensitive gate thyristors in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150S series BT150M series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150S (or BT150M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab c.

BT150M-800R : Glass passivated, sensitive gate thyristors in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150S series BT150M series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150S (or BT150M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab c.

BT150S : Glass passivated, sensitive gate thyristors in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT VDRM, VRRM IT(AV) IT(RMS) ITSM BT150S (or BT150M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 cathode gate 2 anode.

BT150S-500R : Planar passivated SCR with sensitive gate in a SOT78 (TO-220AB) plastic package. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Sensitive gate • Planar passivated for voltage ruggedness and reliability • Direct triggering from low power drivers and logic ICs 3. Applications • General purpose switching • Protection Circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage [1] VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp.

BT150S-600R : Planar passivated SCR with sensitive gate in a SOT428 (DPAK) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Sensitive gate • Planar passivated for voltage ruggedness and reliability • Direct triggering from low power drivers and logic ICs • Surface mountable package 3. Applications • General purpose switching • Protection Circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage [1] VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half s.

BT150S-600R : ·With TO-252 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,half sine wave) PG(AV) Average gate power dissipation ( over any 20ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 2.5 A 4 A 50Hz 35 60Hz 38 .

BT150S-600R : Planar passivated SCR with sensitive gate in a TO252 (DPAK) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Sensitive gate • Planar passivated for voltage ruggedness and reliability • Direct triggering from low power drivers and logic ICs • Surface mountable package 3. Applications • General purpose switching • Protection Circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak off- [1] state voltage VRRM repetitive peak reverse voltage IT(AV) average on-state current .

BT150S-800R : Glass passivated, sensitive gate thyristors in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT150S series BT150M series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT150S (or BT150M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 2.5 4 35 600R 600 2.5 4 35 800R 800 2.5 4 35 V A A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab c.

BT150SK-600R : isc Thyristors BT150SK-600R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as over-voltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-stage current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current PG(AV) Average gate power dissipation Tj Operating junction temperature.

BT151 : isc Thyristors BT151 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM/VRRM Repetitive peak off-state voltage IT(AV) Average on-stage current IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current tp=10ms PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature .