BLT50

BLT52 : 8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) 7.5 CW, class-B 470 6 3 PL (W) 7 Gp (dB) ≥8 typ. 9.5 ≥8 typ. 9.5 ηC (%) ≥50 typ. 65 ≥50 typ. 55 1998 Jan 28 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power.

BLT53 : NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange. PINNING - SOT122D PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 handbook, halfpage halfpage BLT53 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 470 7.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All pers.