BLT52

BLT50 : NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. PINNING - SOT223 BLT50 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION age f (MHz) VCE (V) 470 7.5 PL (W) 1.2 Gp (dB) 10 ηc (%) 55 4 c PIN 1 2 3 4 DESCRIPTION emitter base emitter collector 1 Top view handbook, halfpage b MBB012 e 2 3 MSB002 - 1 Fig.1 Simplified outline and symbol. April 1991 2 Philips Semiconductors Pro.

BLT53 : NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange. PINNING - SOT122D PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 handbook, halfpage halfpage BLT53 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 470 7.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All pers.