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Part Number
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HPU600R2K3DN |
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Manufacturer
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HUAJING MICROELECTRONICS |
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Title
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Silicon N-Channel Power MOSFET |
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Description
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HPU600R2K3DN, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve ...
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Features
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l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test
Applications：
Power switch circuit of adaptor and ...
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File Size
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463.82KB |
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Datasheet
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HPU600R2K3DN PDF File
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