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HPA650R1K3DN

HUAJING MICROELECTRONICS
Part Number HPA650R1K3DN
Manufacturer HUAJING MICROELECTRONICS
Title Silicon N-Channel Power MOSFET
Description HPA650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve ...
Features l Superior switching performance l Low on resistance(Rdson≤1.3Ω) l Low gate charge (Typical Data:16.6nC) l Low reverse transfer capacitances(Typical:16.4pF) l 100% Single pulse avalanche energy test Applications: Power switch circuit of adaptor and...

Published Mar 22, 2018
Datasheet PDF File HPA650R1K3DN PDF File


HPA650R1K3DN
HPA650R1K3DN


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