Part Number | HPA650R1K3DN |
Manufacturer | HUAJING MICROELECTRONICS |
Title | Silicon N-Channel Power MOSFET |
Description | HPA650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve ... |
Features |
l Superior switching performance l Low on resistance(Rdson≤1.3Ω) l Low gate charge (Typical Data:16.6nC) l Low reverse transfer capacitances(Typical:16.4pF) l 100% Single pulse avalanche energy test
Applications:
Power switch circuit of adaptor and...
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Published | Mar 22, 2018 |
Datasheet | HPA650R1K3DN PDF File |