| Part Number | 2SD2413 |
| Manufacturer | GME |
| Title | Silicon NPN triple diffusion planer type Transistor |
| Description | Silicon NPN triple diffusion planer type FEATURES High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large colle... |
| Features |
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Pb Lead-free Low collector to emitter saturation voltage VCE(sat). Production specification 2SD2413 ORDERING INFORMATION Type No. Marking 2SD2413 1S SOT-89 Package Cod... |
| File Size | 194.22KB |
| Datasheet |
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2SD2413 : REPLACEMENT TYPE :2SD2413 FEATURES High Collector to Base Voltage VCBO High Collector to Emitter Voltage VCEO Large Collector Power Dissipation PC Low Collector to Emitter Saturation Voltage VCE(sat) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 400 Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 100 Collector Power Dissipation PC 500 Junction Temperature TJ 150 Storage Temperature Tstg -55~150 Unit V V V mA mW °C °C HED2413(NPN) GENERAL PURPOSE TRANSISTOR SOT-89 MARKING: 1S 1:BASE 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise note.
2SD2413 : Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm s Features q q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector curr.
2SD2414 : TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) 2SD2414(SM) High Current Switching Applications Power Amplifier Applications Unit: mm · Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 80 5 7 1 1.5 40 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-10S2 Weight: 1.4 g (typ.) 1 2003-02-04 2SD2414(SM) Electrical Characteristics .
2SD2416 : Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm s Features q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High foward current transfer ratio hFE. 60V zener diode built in between collector and base. Darlington connection. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction.