| Part Number | NCE01P30I |
| Manufacturer | NCE Power Semiconductor |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap... |
| Features |
● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schematic... |
| Published | Jun 2, 2018 |
| Datasheet |
 NCE01P30I PDF File
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