High Efficiency and Linear Gain Operations
Integrated ESD Protection
Designed for broadband operation
Excellent ruggedness
Large Positive and Negative Gate/Source Voltage Range for Improved C...
ITSN20015P2 PDF File
| Part Number | ITSN20015P2 |
| Manufacturer | Innogration |
| Title | RF Power LDMOS FET |
| Description | The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband c... |
| Features |
High Efficiency and Linear Gain Operations Integrated ESD Protection Designed for broadband operation Excellent ruggedness Large Positive and Negative Gate/Source Voltage Range for Improved C... |
| Published | Aug 5, 2018 |
| Datasheet |
ITSN20015P2 PDF File
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