| Part Number | PDS3911 |
| Manufacturer | Potens semiconductor |
| Title | P-Channel MOSFETs |
| Description | These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai... |
| Features |
-30V,-5.5A, RDS(ON) =50mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications Applications Notebook Load Switch Battery Protection Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Para... |
| File Size | 664.72KB |
| Datasheet |
|
PDS3910 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G SS S G D S BVDSS 30V RDSON 12mΩ ID 10A Features 30V,10A, RDS(ON) =12mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications MB / VGA / Vcore POL Applications SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless othe.
PDS3912 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G SS S G D S BVDSS 30V RDSON 18mΩ ID 9A Features 30V,9A, RDS(ON) =18mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications MB / VGA / Vcore POL Applications SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherw.