| Part Number | PDD6960 |
| Manufacturer | Potens semiconductor |
| Title | N-Channel MOSFETs |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai... |
| Features |
60V,75A, RDS(ON) =6mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available App licMaottioor nDsrive Power Tools LED Lighting Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Para... |
| File Size | 837.89KB |
| Datasheet |
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PDD6965 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G H G S BVDSS -60V RDSON 22m ID -50A Features -60V,-50A, RDS(ON) 22mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise.
PDD6965A : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G H G S BVDSS -60V RDSON 22m ID -50A Features -60V,-50A, RDS(ON) 22mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise.
PDD6966A : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G G S PDD6966A BVDSS 60V RDSON 8.2m ID 55A Features 60V,55A, RDS(ON) =8.2mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VD.