PDD6908

PDD6901 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 9.2m ID -70A Features  -60V,-70A, RDS(ON) =9.2mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.5V Gate Drive Applications Applications  POL Applications  Load Switch  LED Application Absolute Maximum Ratings Tc=25℃ unless otherwise noted .

PDD6902 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D SG G S BVDSS 60V RDSON 4.5m ID 90A Features  60V,90A, RDS(ON) =4.5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  PowerTools  Quick Charger  LED applications  Motor Drive Applications Absolute Maximum Ratings Tc=25℃ unless otherwise .

PDD6903 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D G BVDSS -60V RDSON 28m ID -35A Features  -60V,-35A, RDS(ON) =28mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.5V Gate Drive Applications Applications  POL Applications  Load Switch  LED Application S G S Absolute Maximum Ratings Tc=25℃ unless otherwise noted .

PDD6904 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 60V RDSON 12m ID 45A Features  60V,45A, RDS(ON) =12mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sym.

PDD6905 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 48m ID -16A Features  -60V, -16A, RDS(ON) =48mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted .

PDD6906 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G G S BVDSS 60V RDSON 21m ID 38A Features  60V,38A,RDS(ON)=21mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbo.

PDD6907 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S PDD6907 BVDSS -60V RDSON 68m ID -13A Features  -60V,-13A, RDS(ON) =68mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise.

PDD6909 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 105m ID -10A Features  -60V,-10A, RDS(ON) =105mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted .