| Part Number | PDD0906 |
| Manufacturer | Potens semiconductor |
| Title | N-Channel MOSFETs |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai... |
| Features |
100V,15A, RDS(ON) =90mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source... |
| File Size | 421.84KB |
| Datasheet |
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PDD0903 : .
PDD0903-1 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S BVDSS -100V RDSON 95m ID -18A Features -100V,-18A, RDS(ON) 95mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% PB free and Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) .
PDD0904 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S PDD0904 BVDSS 100V RDSON 55m ID 25A Features 100V,25A, RDS(ON) =55mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings Tc=25℃ unless otherw.
PDD0905 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S PDD0905 BVDSS -100V RDSON 210m ID -10A Features -100V,-10A, RDS(ON) 210mΩ@VGS = -10V Improved dv/dt capability Fast switching Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbo.