Part Number | PDD6901 |
Manufacturer | Potens semiconductor |
Title | P-Channel MOSFETs |
Description | These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai... |
Features |
-60V,-70A, RDS(ON) =9.2mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications Applications POL Applications Load Switch LED Application Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain... |
File Size | 918.89KB |
Datasheet |
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PDD6902 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D SG G S BVDSS 60V RDSON 4.5m ID 90A Features 60V,90A, RDS(ON) =4.5mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available Applications PowerTools Quick Charger LED applications Motor Drive Applications Absolute Maximum Ratings Tc=25℃ unless otherwise .
PDD6903 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D G BVDSS -60V RDSON 28m ID -35A Features -60V,-35A, RDS(ON) =28mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications Applications POL Applications Load Switch LED Application S G S Absolute Maximum Ratings Tc=25℃ unless otherwise noted .
PDD6904 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S BVDSS 60V RDSON 12m ID 45A Features 60V,45A, RDS(ON) =12mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sym.
PDD6905 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 48m ID -16A Features -60V, -16A, RDS(ON) =48mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted .
PDD6906 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G G S BVDSS 60V RDSON 21m ID 38A Features 60V,38A,RDS(ON)=21mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbo.
PDD6907 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S PDD6907 BVDSS -60V RDSON 68m ID -13A Features -60V,-13A, RDS(ON) =68mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise.
PDD6908 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D S G G D S PDD6908 BVDSS 60V RDSON 34m ID 25A Features 60V,25A, RDS(ON)=34mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise note.
PDD6909 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D G S G D S BVDSS -60V RDSON 105m ID -10A Features -60V,-10A, RDS(ON) =105mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted .