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PDD6965


Part Number PDD6965
Manufacturer Potens semiconductor
Title P-Channel MOSFETs
Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai...
Features
 -60V,-50A, RDS(ON) 22mΩ@VGS = -10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available Applications
 Networking
 Load Switch
 LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter ...

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PDD6960 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G G S BVDSS 60V RDSON 6m ID 75A Features  60V,75A, RDS(ON) =6mΩ @VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available ApplicMaottioor nDsrive  Power Tools  LED Lighting  Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwi.

PDD6965A : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G H G S BVDSS -60V RDSON 22m ID -50A Features  -60V,-50A, RDS(ON) 22mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings (Tc=25℃ unless otherwise.

PDD6966A : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D S G G S PDD6966A BVDSS 60V RDSON 8.2m ID 55A Features  60V,55A, RDS(ON) =8.2mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Networking  Load Switch  LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VD.




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