| Part Number | PE80H13 |
| Manufacturer | semi one |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The PE80H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl... |
| Features |
● VDS =80V,ID =130A RDS(ON) 6mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ●... |
| File Size | 817.92KB |
| Datasheet |
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PE80H11 : The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =110A RDS(ON) 8mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply PE80H11 Schematic diagram TO-220-3L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Dra.