| Part Number | CG2H40010 |
| Manufacturer | CREE |
| Title | RF Power GaN HEMT |
| Description | CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th... |
| Features |
• Up to 8 GHz Operation • 18 dB Small Signal Gain at 2.0 GHz • 16 dB Small Signal Gain at 4.0 GHz • 17 W typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastruc... |
| Published | Feb 3, 2019 |
| Datasheet |
 CG2H40010 PDF File
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