| Part Number | SE3035 |
| Manufacturer | Sino-IC |
| Title | N-Channel MOSFET |
| Description | Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Simple Drive ... |
| Features |
For a single MOSFET
VDS = 30V RDS(ON) = 5.5mΩ @ VGS=10 RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperat... |
| File Size | 612.51KB |
| Datasheet |
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SE303A : The SE303A is a GaAs (gallium arsenide) infrared emitting diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions Features o Economical o High output power o Wide half angle o Good linearity o Spectrally matched to silicon sensors o Long lead Applications o Light source for TV remote control o Light source for smoke detector o Optical encoders o Photo choppers, isolator Clear Plastic Resin 0.8~~~ (0.031) Part A: 1.04 (0.041) 3 ± 0.5 I~ Part B: 0.65 (0.025) 24 Min (0.945 Min) A: ¢1.2 Max (f,JO.047 Max) B: cpO.S Max (~0.031 Max) 2 ± 0.5 (0.079) (Bottom View) Package Dimensio.