| Part Number | SFB120N80B |
| Manufacturer | SCILICON |
| Title | N-MOSFET |
| Description | SFP(B)120N80B N-MOSFET 80V, 120A, 5.5mΩ Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity... |
| Features |
Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness
Product Summary
VDS RDS(on)@VGS=10V ID
80V 5.5 mΩ
120A
Application
Power switching application UPS (Uninterruptible Power Supplies) DC/DC c...
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| File Size | 1.66MB |
| Datasheet |
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SFB120N80 : Features Adanced trench process technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Fast Switching High Ruggedness Application Motor Drives UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications SFP(B)100N80 N-MOSFET 80V, 100A, 5.7mΩ Product Summary VDS RDS(on)@VGS=10V ID 80V 5.7 mΩ 100A Part ID Package Type Marking SFP120N80 SFB120N80 TO-220 TO-263 100N80 100N80 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=1mH,Rg=25Ω, ID=sweep(14A~46A)) Gate-emitter voltage Power dissipation TC = 25°C Operating .