| Part Number | SVF2N60RD |
| Manufacturer | Silan Microelectronics |
| Title | 600V N-CHANNEL MOSFET |
| Description | SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage p... |
| Features |
2A,600V,RDS(on)(typ)=3.7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
2
11
3
3 1.Gate 2. Drain 3. Source TO-252-2L
1 23
TO-251J-3L
123
TO-251D-3L
NOMENCLATURE
Silan VDMOS Code of F-Cell process
SVF XNXXRX
Package information. Example: FJH: TO-220FJH;
F:...
|
| File Size | 366.96KB |
| Datasheet |
|
SVF2N60RM : SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2A,600V,RDS(on)(typ)=3.7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-3L 123 TO-251D-3L NOMENCLATURE .
SVF2N60RMJ : SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2A,600V,RDS(on)(typ)=3.7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-3L 123 TO-251D-3L NOMENCLATURE .