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RD02LUS2

Mitsubishi
Part Number RD02LUS2
Manufacturer Mitsubishi
Title Silicon RF Power MOS FET
Description RD02LUS2 is a MOS FET type transistor designed for VHF/UHF RF driver device. OUTLINE DRAWING FEATU...
Features 1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W ...
Published Apr 16, 2019
Datasheet PDF File RD02LUS2 PDF File


RD02LUS2
RD02LUS2


Features
1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W 2.Integrated gate protection diode APPLICATION For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS...



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