Part Number | SVF4N65CAF |
Manufacturer | SL |
Title | 650V N-CHANNEL MOSFET |
Description | SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-... |
Features |
4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N65CAF SVF4N65CAD SVF4N65CADTR SVF4N65CAM SVF4N65CAMJ SVF4N65CAMN SVF4N65CAK
Package
TO-220F-3L TO-252-2L TO-252-2L TO-251D-3L TO-251J-3L...
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File Size | 506.72KB |
Datasheet |
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SVF4N65CAD : SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65CAF SVF4N65CAD SVF4N65CADTR S.
SVF4N65CAK : SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65CAF SVF4N65CAD SVF4N65CADTR S.
SVF4N65CAM : SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65CAF SVF4N65CAD SVF4N65CADTR S.
SVF4N65CAMJ : SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65CAF SVF4N65CAD SVF4N65CADTR S.
SVF4N65CAMN : SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65CAF SVF4N65CAD SVF4N65CADTR S.