| Part Number | PSMN1R5-30YLC |
| Manufacturer | nexperia |
| Title | N-channel MOSFET |
| Description | Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, comm... |
| Features |
and benefits
• High reliability Power SO8 package, qualified to 175°C • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads • Ultra low Rdson and low parasitic inductance 3. Applications • DC-to-DC... |
| File Size | 323.71KB |
| Datasheet |
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PSMN1R5-30YL : Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power convertors Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj Quick reference data Parameter drain-source voltage drain current total powe.
PSMN1R5-30YL : Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power convertors Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C .