| Part Number | TMS426160 |
| Manufacturer | Texas Instruments |
| Title | 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
| Description | The TMS4xx160 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 OE RAS VCC ... |
| Features |
maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS4xx160 and TMS4xx160P are offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix) and a 42-lea...
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| File Size | 399.78KB |
| Datasheet |
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TMS426160P : The TMS4xx160 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 OE RAS VCC VSS W Output Enable Row-Address Strobe 5-V or 3.3-V Supply‡ Ground Write Enable bits each. The TMS4xx160P series is a similar ‡ See Available Options Table. set of high-speed, low-power, self-refresh, 16 777 216-bit DRAMs organized as 1 048 576 words of 16 bits each. Both sets employ state-of-the-art enhanced performance implanted CMOS (EPIC™) technology for high performance, reliability, and low power at low cost. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas .