| Part Number | TMS427809AP |
| Manufacturer | Texas Instruments |
| Title | DYNAMIC RANDOM-ACCESS MEMORIES |
| Description | The TMS417809A and TMS427809A series are 16 777 216-bit dynamic random access memory (DRAM) devices organized as 2 097 152 words of 8 bits each. T... |
| Features |
maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS417809A is offered in a 28-lead plastic surface-mount SOJ package (DZ suffix). The TMS427809A / P is offere...
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| File Size | 412.57KB |
| Datasheet |
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TMS427809A : The TMS417809A and TMS427809A series are 16 777 216-bit dynamic random access memory (DRAM) devices organized as 2 097 152 words of 8 bits each. The TMS427809AP series is a low-power, self-refresh, 16 777 216-bit DRAM organized as 4 194 304 words of four bits.They employ TI state-of-the-art technology for high performance, reliability, and low power. AVAILABLE OPTIONS DEVICE POWER SUPPLY REFRESH CYCLES TMS417809A 5 V 2 048 in 32 ms TMS427809A 3.3 V 2 048 in 32 ms TMS427809AP 3.3 V 2 048 in 128 ms These devices feature maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greate.