| Part Number | TMS418169A |
| Manufacturer | Texas Instruments |
| Title | DYNAMIC RANDOM-ACCESS MEMORIES |
| Description | PIN NOMENCLATURE The TMS418169A and TMS428169A are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 1 048 576 words of A... |
| Features |
maximum RAS access times of 50-, 60-, and 70 ns, and the
OE
RAS
VCC VSS W
Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable
TMS428169A features maximum RAS access
times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data ou...
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| File Size | 422.65KB |
| Datasheet |
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TMS418169 : † A10 and A11 are NC for TMS418169. The TMS418169 and the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. PIN NOMENCLATURE A0 – A11 DQ0 – DQ15 LCAS UCAS NC OE RAS VCC VSS W Address Inputs Data In / Data Out Lower Column-Address Strobe Upper Column-Address Strobe No Internal Connection Out.