| Part Number | TMS465169 |
| Manufacturer | Texas Instruments |
| Title | DYNAMIC RANDOM-ACCESS MEMORIES |
| Description | The and TMS465169 is a high-speed, 67 108 864-bit dynamic random-access memory (DRAM) device organized as 4 194 304 words of 16 bits. The TMS46516... |
| Features |
maximum RAS access times of 50 and 60 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS465169/ P is offered in a 50-lead plastic surface-mount TSOP (DGE suffix). This package is designed for operation...
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| File Size | 448.50KB |
| Datasheet |
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TMS465169P : The and TMS465169 is a high-speed, 67 108 864-bit dynamic random-access memory (DRAM) device organized as 4 194 304 words of 16 bits. The TMS465169P is similar DRAM but includes a long refresh period and a self-refresh option. Both employ state-of-the-art technology for high performance, reliability, and low power at low cost. TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE ( TOP VIEW ) VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC VCC W RAS NC NC W NC A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 VSS 49 DQ15 48 DQ14 47 DQ13 46 DQ12 45 VSS 44 DQ11 43 DQ.