Part Number | PD54003L |
Manufacturer | STMicroelectronics |
Title | RF POWER TRANSISTORS |
Description | The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band com... |
Features |
-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
May, 29 2003
Value 25
-0.5 to +15 4
19.5 150 -65 to +150
4.1
Unit V V A W °C °C
°C/W
1/8
PD54003L
...
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File Size | 83.07KB |
Datasheet |
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PD54003-E : The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true Surfacemount Device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF require.
PD54003S-E : The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true Surfacemount Device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF require.