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PD54003L

Part Number PD54003L
Manufacturer STMicroelectronics
Title RF POWER TRANSISTORS
Description The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band com...
Features -Source Voltage ID Drain Current PDISS Power Dissipation (@ Tc = 70°C) Tj Max. Operating Junction Temperature TSTG Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance May, 29 2003 Value 25 -0.5 to +15 4 19.5 150 -65 to +150 4.1 Unit V V A W °C °C °C/W 1/8 PD54003L ...

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PD54003-E : The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true Surfacemount Device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF require.

PD54003S-E : The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true Surfacemount Device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF require.




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