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RJQ6008DPM

Renesas
Part Number RJQ6008DPM
Manufacturer Renesas (https://www.renesas.com/)
Title IGBT/Diode
Description RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching Features  Low collector to emitte...
Features  Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast ...
Published Apr 13, 2020
Datasheet PDF File RJQ6008DPM PDF File


RJQ6008DPM
RJQ6008DPM

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Features

 Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching Preliminary Datasheet R07DS0847EJ010...



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