| Part Number | SH8K25 |
| Manufacturer | ROHM |
| Title | Power MOSFET |
| Description | SH8K25 40V Nch+Nch Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 85mΩ ±5.2A 3W lFeatures 1) Low on - resistance 2) Small Surface Mount Package 3)... |
| Features |
1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free
lOutline
SOP8
lInner circuit
Datasheet
lPackaging specifications
Packing
lApplication
Reel size (mm)
Switching
Type Tape width (mm) Quantity (pcs)
Taping code
Markin...
|
| File Size | 1.51MB |
| Datasheet |
|
SH8K2 : 4V Drive Nch+Nch MOSFET SH8K2 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter. Dimensions (Unit : mm) SOP8 Each lead has same dimensions Packaging specifications Package Type Code Basic ordering unit (pieces) SH8K2 Taping TB 2500 Absolute maximum ratings (Ta=25C) It is the same ratings for the Tr1 and Tr2. Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Storage temperature ∗1 Pw 10μs, Duty cycle 1% ∗2 MOU.
SH8K22 : 4V Drive Nch+Nch MOSFET SH8K22 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter Dimensions (Unit : mm) SOP8 Each lead has same dimensions Packaging specifications Package Type Code Basic ordering unit (pieces) SH8K22 Taping TB 2500 Absolute maximum ratings (Ta=25C) It is the same ratings for the Tr1 and Tr2. Parameter Symbol Limits Unit Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Chanel temperature Range of Storage temperature *1 PW 10ｓ、Duty c.