| Part Number | VB60170G-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Title | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| Description | www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 ... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com... |
| Published | May 4, 2020 |
| Datasheet |
 VB60170G-E3 PDF File
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