| Part Number | MRFE6VP61K25GN |
| Manufacturer | NXP |
| Title | RF Power LDMOS Transistors |
| Description | Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhan... |
| Features |
Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified up to a Maximum of 50 VDD Operation Characterized from 30 to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Bias... |
| File Size | 1.01MB |
| Datasheet |
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MRFE6VP61K25GSR5 : Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 24.0 74.0 22.9 74.6 Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 MRFE6VP61K25HR6 MRFE6VP61K25H.