Part Number | TIM5359-4UL |
Manufacturer | Toshiba |
Title | MICROWAVE POWER GaAs FET |
Description | FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN G1dB= 10.5dB at 5.3GHz to 5.9GHz ・HERMETICALL... |
Features |
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 5.3GHz to 5.9GHz ・HIGH GAIN
G1dB= 10.5dB at 5.3GHz to 5.9GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5359-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTI...
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File Size | 357.91KB |
Datasheet |
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