Part Number | TIM0910-8 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Title | MICROWAVE POWER GaAs FET |
Description | FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.5dBm at 9.5GHz to 10.5GHz ・HIGH GAIN G1dB= 6.0dB at 9.5GHz to 10.5GHz ・HERMETICAL... |
Features |
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 39.5dBm at 9.5GHz to 10.5GHz ・HIGH GAIN
G1dB= 6.0dB at 9.5GHz to 10.5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-8
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTIC...
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Published | Jun 20, 2020 |
Datasheet | TIM0910-8 PDF File |