1SS133

1SS130 : www.DataSheet4U.com 1SS130 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 100 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0.019 (0.50)max. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Power Dissipation Maximum Non-repetitive Peak Forward Current M.

1SS131 : www.DataSheet4U.com 1SS131 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0.019 (0.50)max. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Power Dissipation Maximum Non-repetitive Peak Forward Current Ma.

1SS132 : www.DataSheet4U.com 1SS132 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 55 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. 1.00 (25.4) min. Cathode Mark 0.118 (3.0) max. 0.019 (0.50)max. MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Power Dissipation Maximum Non-repetitive Peak Forward Current Ma.

1SS133 : 1SS133 Diodes Switching diode 1SS133 !Applications High speed switching !External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 ROHM : MSD EIAJ : − JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 −65~+175 Unit V V mA mA mA mW °C °C !Electrical characteristics (Ta=2.

1SS133 : .

1SS133 : 1SS133 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Average Forward Current Maximum Peak Fo.

1SS133 : Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133 Silicon Epitaxial Planar Switching Diode ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t 1 s Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω DO-35 INCHES MM DIM MIN MAX MIN MAX.

1SS133 : 1SS133 Silicon Epitaxial Planar Switching Diode Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t 1 s Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Max. 0.5 Max. .

1SS133M : only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to .

1SS133S : Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133S Silicon Epitaxial Planar Switching Diode ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t 1 s Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω DO-34 INCHES MM DIM MIN MAX MIN MA.

1SS136 : www.DataSheet4U.com MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS136 • • • • Features High reliability. High speed. (trr=2.0ns Max.) Silicon epitaxial planar Marking : Cathode band and type number High Speed Switching Diode
4 Rating 75 65 600 200 4.0 -55 to +150 -55 to +150 Unit V V mA mA A O C O C

Absolute maximum Ratings Symbol VRM VR IFM IO Isurge TJ TSTG Rating Peak Reverse Voltage DC Reverse Voltage Peak Forward Current Mean Rectifying Current Surge Current (1us) Operating Junction Temperature Storage Temperature   

Electrical Characteristics @ .

1SS139 : www.DataSheet4U.com .

1SS13C1 : 1SS13C1 THRU 1SS15C1 HUAGAO LIMITED high speed low noise switching diode Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere Qs9000 SOD-123 FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters,free wheeling ,and polarity protection applications MECHANICAL DATA Case: SOD-123 plastic case Weight: Approx. 0.01 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless oth.