| Part Number | BUT100 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Hight Current Capability ·Hight Ruggedness ·Minimum Lot-to-Lot variations for robu... |
| Features |
tage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) )
Collector-Emitter Saturation Voltage
IC= 50A; IB= 2.5A IC = 50A IB = 2.5A Tj = 100℃
VBE(sat) ∗ Base-Emitter Saturation Voltage
IC= 50A; IB= 2.5A IC = 50A IB = 2.5A Tj = 100℃
hFE
DC Current Gain
IC= 1A ; V...
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| File Size | 222.16KB |
| Datasheet |
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BUT100 : The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. 1 2 TO-3 (version " S ") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VCEO VEBO IE IEM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Dissipation at Tc 25 oC Storage Temperature Max. Operating Junction Temperature February 2003 Value 200 125 7 50 150 10 30 300 -65 to 200 200 Unit V V V A A A A W oC oC 1/4 BUT100 THERMAL DATA Rth.