Part Number | SDT7B04 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·DC Current Gain- : hFE= 20~250(Min.)@IC= 2.5A ·Minimum Lot-to-Lot variations for rob... |
Features |
ss otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.25A
ICEO...
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Published | Sep 9, 2020 |
Datasheet | SDT7B04 PDF File |